Semiconductive Nb-doped BaTiO3 thin films were grown in situ by pulsed liquid-injection metalorganic chemical vapor deposition on (0 1 2) LaAlO3 substrates. The films were epitaxially grown, although the quality decreased with increasing Nb content. The resistivity was strongly reduced after post-deposition annealing under argon. The room-temperature resistivity reached a minimum of 3 Omega cm for films with similar to 2.4 at% Nb content (as measured by EDS). The semiconductive behavior was measured from room temperature up to 470K and no positive temperature coefficient effect was observed. (C) 2002 Elsevier Science B.V. All rights reserved.