Journal of Crystal Growth, Vol.237, 192-195, 2002
Surface structure changes associated with Ga diffusion on Si(111)7 x 7 surface
A small block of Ga was placed on an Si(1 1 1)7 x 7 surface elevated at 175degreesC and structure changes caused by surface diffusion of Ga from the block were investigated with scanning tunneling microscopy in order to clarify reaction behavior of Ga on an Si(1 1 1)7 x 7 surface. (C) 2002 Elsevier Science B.V. All rights reserved.