Thin films of solid solution of SrBi2Ta0.7Nb0.3)(2)O-9-Bi3TaTiO9 [(1 -x)SBT-xBTT] were prepared on (1 1 1 )Pt/Ti/SiO2/Si substrates at 650degreesC by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (10 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)(2)O-9 film. Moreover, Curie temperature of this material with x = 0.3 was 440degreesC and was almost the same as that of Sr0.8Bi2.2(Ta(0.7)Nb0.(3))(2)O-9. (C) 2002 Elsevier Science B.V. All rights reserved.