The compound-source molecular beam epitaxy of GaN on (0 0 0 1) 6H-SiC was investigated. GaN powder was used as a source material. The source beams of GaN were supplied on the surface of substrates at source temperatures > 900 degreesC. The epitaxial growth of GaN was achieved at the low growth temperature of 570 degreesC. (C) 2002 Elsevier Science B.V, All rights reserved.