The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development or the full Potential of Sic-based device technology. In this paper, recent achievements in bulk crystal growth of Sic are reviewed. We present results on the physical vapor transport growth of Sic bulk single crystals by highlighting the crystal diameter enlargement and the quality improvement of Sic crystals. The causes and formation mechanisms of crystallographic defects. such as micropipes and tow-angle grain boundaries, in Sic crystals are discussed. The results of the growth perpendicular to the c-axis are also reported, where stacking faults are defects of major concern. We present an atomistic surface model for the stacking fault generation and discuss a possible way to circumvent this problem. (C) 2002 Elsevier Science B.V. All rights reserved.