In order to reduce the growth temperature of SiC crystals, Ga-Al-Si and/or Sn-Al-Si solution, in which the Si content was just below the saturation value, was reacted with C3H8 gas at 950degreesC. After a 10 h-reaction, many small crystals were found in the solution. X-ray diffraction measurements revealed that the crystals are 3C-SiC. Using the Wetting solution of these solutions, 3C-SiC crystal layers could be grown on a 6H-SiC substrate. (C) 2002 Elsevier Science B.V. All rights reserved.