High-density InGaAs/AlGaAs quantum wire (QWR) structures with a period of 430 nm were successfully grown by using constant metalorganic chemical vapor deposition growth technique in which submicron gratings were preserved even after an epitaxial growth of 1mum thickness. The quantum confinement effect of the InGaAs/AlGaAs QWRs is strong due to the large band offset and enhanced migration of surface adsorbed III-group element species compared with the GaAs/AlGaAs QWRs. The photoluminescence signal of the InGaAs/AlGaAs QWRs was observed in the temperature range from 10 to 300K with a relatively narrow full width at half maximum of <40meV. (C) 2002 Elsevier Science B.V. All rights reserved.