High quality In1-xGaxAs (x = 0.2) layers were grown on composition-converted InAs(1 1 1) patterned substrates by liquid phase epitaxy. Epitaxial lateral overgrown In1-xGaxAs (x = 0.2) layer with flat and mirror-like Surface was obtained on trenchless substrates. Clean bridge layer of In1-xGaxAs (x = 0.2) was not formed when the trench substrate was used. When the trench Substrate with SiNx deposition at the trench bottom was used, In1-xGaxAs (x = 0.2) bridge layer resulted. The etch pit density of the bridge layer was found to be low. Ga and In contents of the In1-xGaxAs (x = 0.2) epitaxial layers grown on all types of composition-converted InAs substrates were found to be uniform. (C) 2002 Elsevier Science B.V. All rights reserved.