Wurtzite ZnS films were epitaxially, grown on c- and a-plane sapphire substrates at 800degreesC by pulsed laser deposition using a KrF excimer laser. Hexagonal phase was distinguished from cubic phase by detailed X-ray diffraction analysis Unlike a typical epitaxial relationship Such as GaN or ZnO oil sapphire, the wurtzite ZnS films Oil c- and a-sapphire showed unique epitaxial relationships of Al2O3 [1 1 (2) over bar] parallel to W-ZnS [1 1 (2) over bar 0] and Al2O3 [0 0 0 1] parallel to W-ZnS [1 0 (1) over bar 0]. respectively. Multi-domains were observed in wurtzite ZnS films on a-sapphire. Both films oil sapphire exhibited strong excitonic absorption at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.