beta-FeSi2 bulk single crystals were grown by temperature gradient solution growth using Sb solvent. Basically, rectangular shaped crystals were obtained with facetted crystallographic planes. The structural and electrical properties at room temperature are examined. It is confirmed by X-ray diffraction measurement that the formation of 90degrees order domains around the a-axis is suppressed. The beta-FeSi2 crystal shows a resistivity of 0.1 Omegacm with n-type conductivity. For comparison, the formation of beta-FeSi2 crystals was also examined using Fe and Si as starting materials. (C) 2002 Elsevier Science B.V. All rights reserved.