Plasma parameters of an N-2 plasma used for sputtering of molten Ga to form GaN films were optimized using a multi-cusp plasma-sputter-type ion source. Line spectrum intensities from molecular nitrogen and atomic nitrogen in the near-UV range (39 1 11111 wavelength) and 01 the near-infra-red region (886 nm wavelength). respectively, Look peaks from 0.27 to 0.33 Pa N-2 pressure corresponding to 2.5 eV of electron temperature. A GaN film deposition was attempted at 0.27 Pa N-2 pressure and 1.3 x 10(11)/cm(3) electron density. The X-ray diffraction pattern showed that the gown film exhibits peaks at angles corresponding to (002) and (101) planes of GaN. (C) 2002 Elsevier Science B.V. All rights reserved.