The article presents the results of a numerical simulation study carried out for the liquid phase electroepitaxial growth of single crystals under external magnetic field. The effects of the levels of the applied magnetic field components and the applied electric current density were studied. In the numerical model. a binary system (GaAs) was considered for simplicity. The axisymmetry of the system was maintained in the model due to computational requirements. Numerical simulation results indicate that the flow structure and the concentration distributions in the liquid zone are affected by the variations in the applied magnetic field components. However, the strong contribution of the applied electric current to the magnetic body force components reduces the negative effect of such variations in the magnetic field, and keeps the growth interface stable. In addition, the convective flow due to such magnetic field variations gives rise to a mixing in the horizontal plane that is very beneficial in both stabilizing the growth interface and providing mixing in the liquid solution. The crystal growth experiments conducted for a Ga0.96In0.04As system support that such a small axisymmetric tilt in the magnetic field does not have an adverse effect on the growth. (C) 2002 Elsevier Science B.V. All rights reserved.