Journal of Crystal Growth, Vol.240, No.3-4, 513-520, 2002
Effect of NH3 on the growth characterization of TiN films at low temperature
Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl4-N-2-H-2 system with various flow rates of NH3 at 600degreesC. The growth characteristics, morphology and microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Without NH3 addition, no TiN was deposited at 600degreesC as shown in the X-ray diffraction curve. However, by adding NH3 into the TiCl4-N-2-H-2 system, the crystalline TiN was obtained. The growth rate of TiN films increased with the increase of the NH3 flow rate. The lattice constant of TiN films decreased with the increase of the NH3 flow rate. At a low NH3 flow rate, the TiN (220) with the highest texture coefficient was found. At a high NH3 flow rate, the texture coefficient of TiN (200) increased with the increase of the NH3 flow rate. In morphology observation, thicker plate-like TiN was obtained when the NH3 flow rate was increased. When the flow rate of NH3 was 15 sccm, Moire fringes were observed in the TiN film as determined by TEM analysis. The intrinsic strain was found in the TiN film as deposited with 60 sccm NH3. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:crystal morphology;crystal structure;chemical vapor deposition processes;nitride;titanium compounds