Journal of Crystal Growth, Vol.241, No.1-2, 101-107, 2002
Some experiments on the growth of InTlSb by LPE
InTISb solid solutions have been proposed as new materials to extend the IR detecting capabilities offered by III-V compounds and there have been several reports about their predicted properties and of its growth by NIBE and OMCVD. In this work two types of experiments were done. First, the results of attempts to obtain the binary compound TISb from liquids with a stoichiometric composition are reported. Second, the determination of some liquidus points of the ternary solution and the results of attempts of growing the ternary alloy In1-xTlxSb by LPE on InSb substrates are also reported. Reflectance, X-ray diffraction and EDX measurements show that the epitaxial layers are InSb. TI incorporation into the solid could not be detected by these techniques. (C) 2002 Published by Elsevier Science B.V.