화학공학소재연구정보센터
Journal of Crystal Growth, Vol.242, No.1-2, 177-182, 2002
Control of the facet plane formation on solid-liquid interface of LGS
The correlation of the facet plane that formed on the solid-liquid interface of Langasite (La3Ga5SiO14) single crystals grown by the Czochralski method with its growth conditions was investigated. The crystal homogeneity was characterized by measuring leaky-surface acoustic wave velocity and X-ray topography. In [0001] growth, (10 (1) over bar0) and (0001) facets were formed at the solid-liquid interface. The former often causes an alteration growth in its conical part, and the latter generate a core dislocation that deteriorates the crystal homogeneity. We were able to reduce these crystal defects by controlling the growth conditions, such as the temperature gradient at the melt surface along the radial direction (T-g) or the crystal-rotation rate (R-c). When T-g became higher, the alteration caused by nucleation in a supercooling melt in contact with a (10 (1) over bar0) facet was reduced. Controlling R-c enabled core dislocations to be reduced. (C) 2002 Elsevier Science B.V. All rights reserved.