Low temperature metalorganic chemical vapor deposition growth of InP has been achieved with previously unexplored indium precursor, pentamethylcyclopentadienylindium(l) and white phosphorus rather than traditional sources such as trimethylindium or triethylindium and phosphine. By taking advantage of the low sublimation temperature of new indium precursor, epitaxial InP was obtained at low substrate temperatures ranging between 150degreesC and 250degreesC on InP substrates with rather low growth rates of 2-34Angstrom/min. Optical qualities of grown InP homoepitaxy were analyzed by low-temperature photoluminescence (10 K). Luminescence peaks at 1.419 and 1.418 eV correspond to free excitons and donor bound excitons, respectively. The dominant accidental impurities were donors. Neither acceptor-bound excitons nor significant free electrons to acceptor recombination peaks were observed. The InP epilayers grown on InP substrates at a temperature ranging from 180degreesC to 230degreesC had higher intensity and narrower full-width at half-maximum of luminescence peaks than those of the iron-doped, semi-insulating InP substrates. (C) 2002 Elsevier Science B.V. All rights reserved.