InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

Putyato MA; Preobrazhenskii VV; Semyagin BR; Bolkhovityanov YB; Gilinsky AM; Gutakousky AK; Revenko MA; Pchelyakov OP; Feklin DF

Journal of Crystal Growth, Vol.247, No.1-2, 23-27, 2003

DOI10.1016/S0022-0248(02)01909-7 Export Citation

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

Putyato MA, Preobrazhenskii VV, Semyagin BR, Bolkhovityanov YB, Gilinsky AM, Gutakousky AK, Revenko MA, Pchelyakov OP, Feklin DF

A phosphorus beam source utilizing thermal decomposition of InP is employed in a molecular beam epitaxy system. Quaternary InGaAsP films with reproducible P and As contents in the group V sublattice, and high-quality InGaAsP/InGaP superlattices with 10 and more periods were grown on (0 0 1) GaAs substrates. (C) 2002 Elsevier Science B.V. All rights reserved.

Keywords:solid source molecular beam epitaxy;InGaAsP superlattices