We report on the growth and photoluminescence of InGaN/GaN multiple quantum wells (MQWs) grown on GaN nanocrystals embedded in amorphous SiNx, grown on a p-type Si(100) substrate. p-Type Si(100) was thermally nitridated using NH3 to form an amorphous SiNx layer in a metalorganic vapor phase epitaxy system. GaN nanocrystals were then grown on the SiNx layer, followed by the growth of InGaN/GaN MQWs on the GaN nanocrystals. These nanosize MQWs were capped with amorphous SiNx in a plasma enhanced chemical vapor deposition system. The findings show that nanosize InGaN/GaN MQWs can be embedded in amorphous SiNx grown on p-type Si(I 0 0) and that these self-assembled nanostructures may be used as new nanosize light-emitting, sources as evidenced by photoluminescence from nanosize MQW's. (C) 2002 Elsevier Science B.V. All rights reserved.