화학공학소재연구정보센터
Journal of Crystal Growth, Vol.248, 578-582, 2003
Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
GaN on Sit (111) substrate Lis optimized ernploying an interlayer of low temperature (LT) AIN, high temperature (HT) GaN and another LT AIN layer. The first LT buffer layer was grown at 720 degreesC on etched Sit (111) substrates. In these experiments, we investigated the effects of the growth temperatures of the second LT bufffer layer and the two HT buffer layers. The films were characterized by in-situ reflectance measurements, low temperature photoluminescence (PL) and sheet resistance measurements. Best results have been achieved using a growth temperature of 635 degreesC for the second LT buffer layer and 1120 degreesC for the HT buffer layers. A new crack evaluation method has been used to classify the grown structures. Up to 900 nm of crack-free GaN film with a smooth surface, low yellow PL band emission and high sheet resistance (3500Omega/sq) were achieved on 2 inch Si. This GaN film is well-suited as the buffer for the subsequent deposition of high electron mobility transistors. (C) 2002 Elsevier Science B.V. All rights reserved.