ZnTe epilayers have been grown on (0 0 1) GaAs after depositing a Zn0.9Mn0.1Te (ZMT) buffer layer. This layer has a sphalerite structure and is (1 1 1) oriented. The (111) [112] ZMT direction is oriented along the (0 0 1) [110] GaAs one, with a mismatch of -6.50% for which the film lattice is in extension. Initiated by the buffer, the ZnTe film orientation is [111], instead of the [0 0 1] orientation normally observed when ZnTe is directly grown on (0 0 1) GaAs. High resolution transmission electron microscopy investigations of the microstructure of ZMT layers show twin lamellae whose width increases with distance from the interface, and dislocations with Burgers vectors parallel to the interface. (C) 2002 Elsevier Science B.V. All rights reserved.