During the liquid-encapsulated Czochralski (LEC) process, a single compound semiconductor crystal such as indium phosphide or gallium antimonide is grown by the solidification of an initially molten semiconductor contained in a crucible. The motion of the electrically conducting molten semiconductor can be controlled with an externally applied magnetic field. This paper presents a model for the unsteady transport of a dopant during the LEC process with a steady axial magnetic field. The convective species transport during growth produces significant segregation in both the melt and the crystal. Dopant distributions in the crystal and in the melt at several different stages during growth are presented. (C) 2002 Elsevier Science B.V. All rights reserved.