We demonstrate the first 1.5 mum GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 mum. A 1.465 mum laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm(2) per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 mum, while still preserving luminescence efficiency as compared to 1.3 mum GaInNAs material. (C) 2003 Elsevier Science B.V. All rights reserved.