InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Transmission electron microscopy shows the increase in the island size as compared to the InAs/InGaAs quantum dots. Room temperature photoluminescence at 1.55 mum has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 mum. The effect of nitrogen concentration on the PL peak position and intensity has been studied. (C) 2002 Elsevier Science B.V. All rights reserved.