MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Cordier Y; Semond F; Lorenzini P; Grandjean N; Natali F; Damilano B; Massies J; Hoel V; Minko A; Vellas N; Gaquiere C; DeJaeger JC; Dessertene B; Cassette S; Surrugue M; Adam D; Grattepain JC; Aubry R; Delage SL

Journal of Crystal Growth, Vol.251, No.1-4, 811-815, 2003

DOI10.1016/S0022-0248(02)02149-8 Export Citation

MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

Cordier Y, Semond F, Lorenzini P, Grandjean N, Natali F, Damilano B, Massies J, Hoel V, Minko A, Vellas N, Gaquiere C, DeJaeger JC, Dessertene B, Cassette S, Surrugue M, Adam D, Grattepain JC, Aubry R, Delage SL

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability. (C) 2002 Elsevier Science B.V. All rights reserved.

Keywords:molecular beam epitaxy;GaN;high electron mobility transistors