The liquid phase epitaxial growth of high-quality Hg1-xCdxTe epilayers from Te-rich solution using a modified horizontal slider is described. The horizontal slider has the provisions for (i) the compensation of Hg loss from the growth solution and (ii) an in situ meltback of the substrate surface immediately prior to the layer growth. The two major technological difficulties posed by the low surface tension of Te-solution were overcome to achieve (i) the intact removal of the layer/substrate from the substrate cavity and (ii) a complete wipe-off of the growth solution from the epilayer surface. (C) 2003 Elsevier Science B.V. All rights reserved.