Ferromagnetic Ga1-xMnxAs epilayers with Mn mole fraction in the range of xapproximate to0.2-9.6% were grown successfully on semi-insulating (100) GaAs substrates using the liquid phase epitaxy technique. The ferromagnetic properties of these epilayers were investigated using superconducting quantum interference device at 5 K. The Curie temperature was determined to be 80 K. All the Ga1-xMnxAs layers had p-type conductivity through Hall effect measurements. The measured hole concentration of Ga1-xMnxAs layers decreases from 2.0 x 10(17) cm(-3) to 9.8 X 10(15) cm(-3), with increasing Mn mole fraction in the range of xapproximate to0.2-9.6%. Cross-sectional selected area diffraction pattern of the GaMnAs films obtained through transmission electron microscopy measurement showed that the grown GaMnAs layer can be classified as a single crystal. Transitions involving shallow Mn acceptors were identified through photoluminescence measurements and the ionization energy of Mn acceptor was determined to be 104.6 meV. (C) 2003 Elsevier Science B.V. All rights reserved.