Epitaxial growth of cadmium sulfide on InP(1 0 0) was carried out using molecular beam epitaxy (MBE). Cd was deposited from an effusion cell while sulfur was supplied from ionized H2S gas using an RF atomic source. Epitaxial growth was achieved at growth temperatures ranging from 150degreesC to 300degreesC and stoichiometric US was obtained at all growth temperatures and fluxes investigated. The US layer and CdS/InP interface were investigated using reflection high-energy electron diffraction (RHEED), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The CdS/InP interface was abrupt with no measurable interdiffusion within the experimental parameters investigated in this work. (C) 2003 Elsevier Science B.V. All rights reserved.