The effect of Bridgman furnace configuration on the temperature field, melt convection and the solute distribution in the resulting crystal are experimentally and numerically analyzed for the semiconductor diluted alloy solidification. The governing equations of the heat and mass transfer are solved by using the finite element method with help of the commercial software FIDAP(R). Two different solidification experiments of Ga1-xInxSb (x = 0.01 and 0.04) are simulated in order to compare the numerical results for thermal, velocity and solute fields. The central objective of the work is to give the conditions for which a more uniform distribution of the solute in the crystal can be obtained. It is found that crystals obtained in conditions of a strong convective regime in the vicinity of the solid-liquid interface are more homogeneous radially and on a significant length than the crystals for which solidification occurred in a quasi-diffusive regime. The results, in terms of axial and radial segregation, are compared to experimental chemical analysis. (C) 2003 Elsevier Science B.V. All rights reserved.