Single crystal of p-CdIn2Te4 was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by X-ray diffraction and, photoluminescence (PL) measurements. From the PL spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (DO, X) emission was found to be the dominant intensity in the PL spectrum of the CdIn2Te4:Cd, while the (A(0), X) emission completely disappeared in the CdIn2Te4:Cd. However, the (A0, X) emission in the PL spectrum of the CdIn2Te4:Te was the dominant intensity like in the as-grown CdIn2Te4 crystal. These results indicated that the (DO, X) is associated with V-Te which acted as donor and that the (A0, X) emission is related to V-Cd which acted as acceptor, respectively. The p-CdIn2Te4 crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of (D-0, A(0)) emission and its TO phonon replicas is related to the interaction between donors such as V-Te or Cd-int, and acceptors such as V-Cd or Te-int. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in a stable bonding form. (C) 2003 Elsevier B.V. All rights reserved.