Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates

Novikova SV; Zhao LX; Winser AJ; Kappers M; Barnard JS; Harrison I; Humphreys C; Foxon CT

Journal of Crystal Growth, Vol.256, No.3-4, 237-242, 2003

DOI10.1016/S0022-0248(03)01359-9 Export Citation

Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates

Novikova SV, Zhao LX, Winser AJ, Kappers M, Barnard JS, Harrison I, Humphreys C, Foxon CT

We have investigated the influence of the growth conditions on the intensity of the blue emission from arsenic doped Gat, grown by plasma-assisted molecular beam epitaxy on GaN templates. We have shown that to achieve blue emission from As-doped GaN layers on GaN templates we need to grow layers under extremely Ga-rich conditions. (C) 2003 Elsevier B.V. All rights reserved.

Keywords:molecular beam epitaxy;nitrides;semiconducting III-V materials