Journal of Crystal Growth, Vol.256, No.3-4, 341-346, 2003
Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions
Homoepitaxial growth on 6H-SiC (0 0 0 1)-vicinal faces with inclination of 0.2-0.3degrees by horizontal atmospheric-pressure cold-wall chemical vapor deposition operating at 1500degreesC has been re-investigated. It was found that a low C/Si ratio of 2 can yield wide-area homoepitaxial growth (more than 1 cm(2)) without 3C-SiC inclusions, while a high C/Si ratio is not preferable to homoepitaxial growth on nearly on-axis 6H-SiC (0 0 0 1). (C) 2003 Elsevier B.V. All rights reserved.