화학공학소재연구정보센터
Journal of Crystal Growth, Vol.258, No.1-2, 41-48, 2003
Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at T-g = 450-490degreesC. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the < 1 1 2 > direction steps on (1 1 1)B at T-g = 450degreesC. This indicated that the kink density was high in the < 1 1 2 > direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (I I I)B. And isotropic lateral growth rate was observed on the (1 1 1)A surface at T-g = 450degreesC. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed. (C) 2003 Elsevier B.V. All rights reserved.