The growth of Bi2Se3 thin films by metalorganic chemical vapour deposition (MOCVD) using Trimethylbismuth (TMBi) and a novel Se-precursor: Ditertiarybutylselenide (DTBSe) as bismuth and selenium sources, respectively, is investigated on pyrex substrates. The effect of the growth parameters such as substrate temperature, T-g, and TMBi partial pressure, P-TMBi, on the structural, electrical and thermoelectrical properties for the following growth conditions: 440degreesC less than or equal to T-g less than or equal to 475degreesC, 0.5 x 10(-4) atm less than or equal to P-TMBi less than or equal to 1 x 10(-4) atm and a total hydrogen flow rate D-T = 31/mn, of Bi2Se3 films has been investigated. The crystallinity versus growth condition (T-g, P-TMBi) using X-ray diffraction was studied and a typical preferential c-orientation was observed. Thus, these layers always displayed n-type conduction using Hall effect measurement. The best electric and thermoelectric characteristics under the optimal growth conditions have been found; mu > 250 cm(2)/V s, rho less than or equal to 11.8 muOmega m and alpha = -163.7 muV/K Then, These initial results suggest a significant potential for the MOCVD method to produce good thermoelectrical materials using DTBSe as Se-precursor. (C) 2003 Elsevier B.V. All rights reserved.