SiC thin films have been synthesised by combining low pressure chemical vapour deposition from Si2H6 and C2H2 at 520degreesC and in situ KrF-excimer laser annealing. Glancing incidence. X-ray analysis showed the quantity of polycrystalline SiC in the laser-irradiated area depends on the mass-flow ratio of the precursor gases. In the region outside the laser spot where the films are amorphous, X-ray photoelectron spectroscopy measurements showed an increased SiC character for low disilane:acetylene mass-flow ratios. (C) 2003 Published by Elsevier B.V.