Pb(Zr,Ti)O-3 (PZT) films with (0 0 1) orientation were grown on epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrates. The crystalline Al2O3 thin film was used as an insulating layer to fabricate metal-ferroelectric-insulator-semiconductor structures. The epitaxial-Al2O3(0 0 1) buffer layer was grown on Si(0 0 1) substrates at 1000degreesC using ultrahigh-vacuum chemical vapor deposition. The PZT films were grown on the Al2O3(0 0 1)/Si(0 0 1) substrates using a sol-gel method. Cracks on the surface of the PZT film were not observed with epitaxial-Al2O3(0 0 1) films greater than 30 nm thick. X-ray diffraction peaks associated with a perovskite structure were observed, indicating strongly (0 0 1) oriented patterns on the epitaxial-Al2O3(0 0 1)/Si(0 0 1) substrate. It was also found from results of Auger electron spectroscopy depth profiles that epitaxial-Al2O3(0 0 1) films prevent any reaction between Si and the PZT. (C) 2003 Elsevier B.V. All rights reserved.