Gallium oxide (beta-Ga2O3) nanobelts were synthesized on a large scale by a simple thermal evaporation method from a mixture of gallium (Ga) and silicon oxide (SiO2) nanopowder at 850degreesC in argon atmosphere, which is 200-300degreesC less than that of thermal evaporation methods reported formerly. The nanobelts had a uniform single-crystal monoclinic structure with width ranging from 50 to 300 nm, thickness about 10-20 nm and lengths up to several tens or hundreds of micrometers. The growth of beta-Ga2O3 nanobelts is controlled by vapor-solid crystal growth mechanism. Photoluminescence measurement shows that the nanobelts have one broad, strong blue emission and a UV emission. (C) 2003 Elsevier B.V. All rights reserved.