We have studied in reduced pressure chemical vapor deposition the selective epitaxial growth (SEG) of Si and SiGe using a dichlorosilane + germane + hydrochloric acid chemistry. We have first of all highlighted the specifics of the SEG of Si on patterned wafers with a dichlorosilane + hydrochloric acid chemistry. We have then dealt with the SEG of SiGe, focusing notably on the so-called loading effects (increase of the SiGe growth rate and of the Ge concentration when switching over from a blanket to a dielectric-masked substrate). Finally, we have studied the thermal stability of typical Si/SiGe/Si stacks versus conventional anneals used nowadays for advanced devices in the microelectronics industry. All this knowledge can be used to selectively grow Si or Si/SiGe/Si stacks inside the Si windows of patterned wafers for the formation of raised sources and drains or for the channel engineering of p-type metal oxide semiconductor transistors. (C) 2003 Elsevier B.V. All rights reserved.