화학공학소재연구정보센터
Journal of Crystal Growth, Vol.260, No.3-4, 603-605, 2004
Reply to'Comments on the article "Transport properties of Sn-doped InSb thin films and application to Hall element [J. Crys Growth 251(2003)560]" by M. Oszwaldowski [J. Crys Growth 260(2004)600]'