A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts to GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy with Diethyltellurium as the n-type doping source. The activation of Te in GaSb is only 0.2-0.5, while it is significantly higher at 0.7-0.8 for GaInAssb. In addition, the electron mobility is lower in n-GaSb compared to that in n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10(18) cm(-3) for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10(-5) Omega cm(2) for n-Gasb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10(-6) Omegacm(2) for n-GaInAsSb was measured. (C) 2003 Elsevier B.V. All rights reserved.