GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520degreesC to 600degreesC, with an activation energy of 10.4 kcal/mol. The growth rate was linearly dependent on the group III flow and has a complex dependence on the group V constituents. A room temperature photoluminescence wavelength of > 1.3 mum was observed for unannealed GaAs0.69Sb0.3N0.01. Low temperature (4 K) photoluminescence of GaAs0.69Sb0.3N0.01 shows an increase in FWHM of 2.4-3.4 times the FWHM of GaAs0.7Sb0.3, a red shift of 55-77 meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300K hole mobility of 350 cm(2)/V-s with a 1.0 x 10(17)/cm(3) background hole concentration, and a 77 K mobility of 1220 cm(2)/V-s with a background hole concentration of 4.8 x 10(16)/cm(3). The hole mass of GaAs0.7Sb0.3/GaAs heterostructures was estimated at 0.37-0.40m(o), and we estimate an electron mass of 0.2-0.3m(o) for the GaAs0.69Sb0.3N0.01/GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field. (C) 2003 Elsevier B.V. All rights reserved.