Stable {1 1 3}-facetted Si hut clusters with a small (0 0 1) top facet self-assemble at 940 K on Si1-xCx thin films that are obtained by annealing C-containing Si(0 0 1) surfaces at 975 K. Silicon is supplied by disilane. Several monolayers of deposited C leading to similar to1 nm thick Si1-xCx with 0.3

Keywords:crystal morphology;growth models;interfaces;chemical vapor deposition processes;semiconducting silicon compounds