A kind of novel ferroelectric K0.5Bi0.5TiO3 thin films have been grown on P-Si(l 11) substrates by a spin coating metalorganic decomposition method. The structural properties were studied by X-ray diffraction. The dielectric and ferroelectric properties and insulation characteristic were also studied. The results show that the film annealed at 740degreesC for 4 min presents perovskite phase; the leakage current is below 1.07 x 10(-10) A when the bias voltage is less than 7 V; the memory window in the C-V curve is 11 V in the applied voltage range from - 12 to + 8 V; and the dielectric constant and dielectric loss are 57 and 0.085, respectively, at a frequency of 100 kHz at room temperature. (C) 2003 Elsevier B.V. All rights reserved.