Influence of Sb was studies on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells (MQWs) structure grown by using metalorganic chemical vapor deposition. The structural properties of In0.2Ga0.8As0.98N0.02/GaAs and In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). For In0.2Ga0.8As0.98N0.02/GaAs and In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs,the peaks observed in the photocurrent (PC) and the photoluminescence (PL) spectra were preliminarily assigned to electron-heavy hole (e(l)-hh) and electron-light hole (e(l)-lh) fundamental excitionic transitions. Two additional transitions related to MQWs region are observed in the PC spectra other then transitions involving the ground state. In the case of In0.2Ga0.8As0.98N0.02:Sb/GaAs strained MQWs, the PL and PC peaks are blue-shifted. (C) 2004 Elsevier B.V. All rights reserved.