In this paper, single crystals of dysprosium (Dy) doped La3Ga5SiO14 have been grown along c-axis by using the Czochralski method. The structure of the crystal has been studied by X-ray powder diffraction method and it is found that the crystal structure still belongs to the space group P321, and the unit-cell parameters are calculated to be a = 0.816212 +/- 0.000861 nm, c = 0.508083 +/- 0.000617 nm and V = 0.29314 nm(3). The absorption spectrum and fluorescence spectrum of Dy3+: La3Ga5SiO14 crystal are measured at room temperature, and there are four emission transitions occurring at 479, 576, 662 and 754 nm; however, the yellow emission transitions (F-4(9/2) --> H-6(13/2)) at 576 nm are more intense than others. The segregation coefficients of Dy3+ in La3Ga5SiO14 crystal were measured by X-ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy3+ was determined to be 0.432 wt%. (C) 2003 Elsevier B.V. All rights reserved.