For the first time, an epitaxial Pt(0 0 1) thin film has been grown successfully on a Si(0 0 1) substrate using an epitaxial gamma-Al2O3(0 0 1) buffer layer. The epitaxial gamma-Al2O3(0 0 1) buffer layers on Si substrates were prepared by chemical vapor deposition using trimethyl aluminum and O-2 gas. The epitaxial Pt(0 0 1) films were deposited on the epitaxial Al2O3(0 0 1) layer using RF sputtering at a low deposition rate (similar to 0.7 nm/min), at a substrate temperature of 600degreesC. This could enable the deposition of (0 0 1) oriented ferroelectric films on the Pt(0 0 1). (C) 2004 Elsevier B.V. All rights reserved.