In Metal-organic chemical deposition (MOCVD) growth of AlGaAs/GaAs heterostructure materials, AsH3 is normally used as the group V precursor and H-2 is Used as the carrier gas, which is very toxic and safety harzad. In this contribution, we will present the recent result of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N-2 as the carrier gas. In the growths, TMGa and TMA1 were used as group-III sources, DEZn and silane were used as p-type and n-type dopants. A single quantum well (SQW) laser structure was adopted to characterize the quality of the materials grown. Broad-area stripe lasers with the stripe width of 150 mum and different cavity lengths have been prepared. Lasing of the prepared devices has been successfully achieved with a low threshold current density of 506A/cm(2). Devices with different cavity lengths (1200/1000/800gm) were cleaved and tested to obtain the internal loss alpha(i) and internal quantum efficiency eta(i) of the grown laser structure grown. An internal loss alpha(i) of 9.7 cm(-1) and internal quantum efficiency eta(i) of 81% were received. This is the first report so far for MOCVD growth of AlGaAs/GaAs diode laser materials using TBA as the group-V source and N-2 as the carrier gas. (C) 2004 Elsevier B.V. All rights reserved.