Laser spectroscopy technique has been applied for studies of MnF2 and ZnF2 layers grown by molecular beam epitaxy on silicon substrates with the use of CaF2 buffer layer. The films were doped during the growth with samarium either from SmF3 molecular or Sin atomic beams. The excitation wavelength was scanned in the region of H-6(5/2) --> (4)G(5/2) transitions of Sm3+ as well as near the absorption edge of the Mn2+ 3d excitons of the tetragonal and orthorhombic phases of MnF2. The observed emission lines have been assigned to two types of (Sm3+ -F-) centers in the orthorhombic phase and one in the tetragonal rutile phase of MnF2. Efficient energy transfer from the host lattice to Sm3+ centers was observed during excitation into the lowest Mn2+ absorption band. Similar centers were also found in ZnF2 epitaxial films, where along with (Sm3+ - F-) pair centers, an isolated Sm3+ center with remote charge compensation was observed. Thus it was shown that Sm3+ ions can be used as efficient luminescent probe for characterization of crystal phase composition in the films as well as the local environment of the dopants. (C) 2004 Elsevier B.V. All rights reserved.