화학공학소재연구정보센터
Journal of Crystal Growth, Vol.269, No.2-4, 419-424, 2004
Growth of Cd1-xZnxTe (x similar to 0.04) films by hot-wall method and its evaluation
Cd1-xZnxTe(x similar to 0.04) films with a thickness of less than 300 mum are grown on a ITO/glass substrate by hot wall method for obtaining good quality and electrically high resistive poly crystals sensitive to radial rays. A suitable growth condition is examined experimentally by discussing a relation between growth parameters such as the temperatures of growth, substrate and reservoir chambers, and the physical properties of the film grown under a specified condition. sensitivity of the film to gamma-rays is examined, and a possibility of the film used as an absorbing layer for radial rays is shown. (C) 2004 Elsevier B.V. All rights reserved.