The high-crystallization perovskite Ba(Zr0.1Ti0.9)O-3 (BZT) films were deposited on the surface of a polished single crystal Si (111) substrate by radio-frequency plasma enhanced pulsed laser deposition (RF-PEPLD). X-ray diffraction (XRD), Raman scattering spectra, and scanning electric microscopy were used to characterize the crystal structure, phonon mode, and surface morphology of the deposited BZT films. The dependence of the crystallinity of the prepared BZT films on the substrate temperature was traced by XRD in detail. The experimental results showed that the crystallinity of the BZT films was improved gradually with increasing substrate temperature when it was below 720degreesC. Above 720degreesC, the crystallinity of the BZT films gradually worsened with increasing substrate temperature. Accordingly, we have determined the threshold value of 720degreesC of the substrate temperature for the high-crystallization of BZT films upon RE-PEPLD. The mechanism concerning the dependence of the crystallinity of the BZT films on the growth temperature is discussed in the paper. (C) 2004 Elsevier B.V. All rights reserved.