AlxInyGa1-x-yN offers many possibilities for optoelectronic applications in the blue and ultraviolet emission range. Since band gap and lattice constant can be adjusted independently, the following reduction of strain and defects in the active layer will enhance some characteristics of nitride laser diodes, like output power or lifetime. For quantum dot structures, ultra-low threshold, high material gain and improved temperature stability have been theoretically predicted. We investigate the growth of AlxInyGa1-x-yN and the formation mechanism of quantum dots depending on the main epitaxy parameters like growth temperature, amount of deposited material, TMAl flow or even its carrier gas. At 760degreesC, a narrow distribution of quantum dots was achieved, and depending on the growth conditions, the maximum dot density was about 4 x 10(10) dots/cm(2) and with average heights of 30nm. Photoluminescence measurements of uncapped samples showed narrow emission peaks between 2.7 and 2.95eV. (C) 2004 Elsevier B.V. All rights reserved.